Postgraduate Architecture Students Win European Architectural Medal



UCC/CIT Architecture (MA) students Kieran Cremin and Eoghan Horgan’s project “Entangled City” was awarded a European Architectural Medal in Architecture (Prize for Innovation) in December 2015.

“This prize is a fitting and well deserved acknowledgement of our student talent and their incredible work ethic; all of which, well hidden behind modest exteriors” (Jason O’Shaughnessy, Master of Architecture Course Director).

The project addresses the cultural dissonance between Prague’s history and present day tourist industry. You can view the full project and the Jury comments at this link.

Well done also to our student Aisling Byrne who was also shortlisted for the European Architectural Medals ‘Best Diploma Project’. You can view Aisling’s project here.

Find out more about the UCC Postgraduate Architecture (MArch) here.

European Architectural Medals – Best Diploma Projects is an annual European competition that awards excellence in crossing the threshold from education to profession. The competition is organised by:

  • University of Architecture and Urbanism Ion Mincu (UAUIM)
  • European Association for Architectural Education (EAAE)
  • The Architects’ Council of Europe (ACE)

Find out more here


UCC RESEARCH: Development of InAlN/GaN high electron mobility transistors for space applications

phd student research university college cork

By Dr Matt Smith, Researcher, Tyndall National Institute

In recent years the discovery of hundreds of extra-solar planets has led to the consideration of Jupiter as a gas-giant archetype, and the emerging field of astrobiology has refocused the search for extra-terrestrial life on its larger moons.

Proper investigation of the Jovian system is currently limited by the stability and reliability of the electrical components used to process experimental data aboard unmanned probes and transmit back to Earth. In this work I investigate InAlN/GaN high electron mobility transistors (HEMTs) as a candidate for future missions, such as the European Space Agency’s upcoming Jupiter Icy Moon Explorer, based on the recent successes of the established AlGaN/GaN HEMT technology. InAlN HEMTs showed good suitability for space applications through electrical characterization after exposure to high temperatures and gamma radiation and by extended bias stressing. A comparison between InAlN and AlGaN HEMTs, both in various stages of development, highlighted the great potential of the material system to provide space-ready electronics. The physics behind HEMT operation was explored, leading to optimisation of device performance and reliability and culminating in the realization of InAlN HEMTs manufactured in a typical AlGaN HEMT production environment. The success of the project sets the stage for wide-scale implementation of GaN-based electronics in the space industry, which is expected to occur in the years to come, and circumvents the major obstacle of electrical failure from mankind’s route to exploring and understanding the universe at large.